Semiconductor device and method of manufacturing the same, circuit board and electronic instrument

ABSTRACT

A method of manufacturing a semiconductor device, comprising a first step of putting a resin between one surface of a semiconductor chip having a plurality of electrodes formed thereon and a substrate having a wiring pattern formed thereon and having at least one through-hole in the region in which the semiconductor chip is to be mounted on the substrate, to form a space therebetween that opens into the through-hole, and a second step of pressing either one of the semiconductor chip and the substrate against the other to thereby bond the semiconductor chip to the substrate.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates to a semiconductor device and amethod of manufacturing it, and to a circuit board and electronicinstruments.

[0003] 2. Description of the Related Art

[0004] As one type of CSP (chip scale/size package) semiconductordevices, known is a face-down bonding (flip chip bonding) structure withsemiconductor chips on a substrate. For example, known is asemiconductor device fabricated by providing an anisotropic conductivematerial on the entire surface of a substrate on which semiconductorchips are to be mounted, followed by mounting semiconductor chipsthereon.

[0005] However, the anisotropic conductive material provided on theentire surface of the substrate, on which semiconductor chips are to bemounted, runs around the semiconductor chips mounted on the substrateowing to the stress applied thereto when the semiconductor chips aremounted on the substrate, and will often form bubbles around the edgesof the mounted semiconductor chips. In addition, since the contact areabetween the two is large, bubbles may be formed also somewhere therein.These often detract the reliability of the semiconductor device.

SUMMARY OF THE INVENTION

[0006] The invention is to solve the problems, and its object is toprovide a semiconductor device of high reliability and a method ofmanufacturing it, and also a circuit board and electronic instruments.

[0007] According to the invention, there is provided a method ofmanufacturing a semiconductor device, which comprises

[0008] a first step of putting a resin between one surface of asemiconductor chip having a plurality of electrodes formed thereon and asubstrate having a wiring pattern formed thereon and having at least onethrough-hole in the region in which the semiconductor chip is to bemounted on the substrate, to form a space therebetween that opens intothe through-hole, and

[0009] a second step of pressing either one of the semiconductor chipand the substrate against the other to thereby bond the semiconductorchip to the substrate.

[0010] According to the invention, there is also provided asemiconductor device which comprises

[0011] a semiconductor chip having a plurality of electrodes,

[0012] a substrate having a wiring pattern formed thereon, with thesemiconductor chip being face-down bonded thereto, and having at leastone through-hole in the region in which the semiconductor chip ismounted on the substrate, and

[0013] a resin put at least between the semiconductor chip and thesubstrate, and wherein

[0014] the resin is put therebetween to form a space that opens into thethrough-hole.

BRIEF DESCRIPTION OF THE DRAWINGS

[0015]FIG. 1(A) and FIG. 1(B) are views illustrating a first embodimentof the semiconductor device, and a method of manufacturing it.

[0016]FIG. 2 is a plan view of the semiconductor device of the firstembodiment.

[0017]FIG. 3(A) and FIG. 3(B) are views illustrating a modification ofthe first embodiment of the semiconductor device, and a method ofmanufacturing it.

[0018]FIG. 4(A) and FIG. 4(B) are views illustrating a second embodimentof the semiconductor device, and a method of manufacturing it.

[0019]FIG. 5 is a plan view of a third embodiment of the semiconductordevice.

[0020]FIG. 6 is a view showing a circuit board on which is mounted asemiconductor device fabricated according to the invention.

[0021]FIG. 7 is a view showing an electronic instrument having asemiconductor device fabricated according to the invention.

[0022]FIG. 8 is a view showing an electronic instrument having asemiconductor device fabricated according to the invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0023] The first characteristic of the invention is that the method ofmanufacturing a semiconductor device comprises;

[0024] a first step of putting a resin between one surface of asemiconductor chip having a plurality of electrodes formed thereon and asubstrate having a wiring pattern formed thereon and having at least onethrough-hole in the region in which the semiconductor chip is to bemounted on the substrate, to form a space therebetween that opens intothe through-hole, and

[0025] a second step of pressing either one of the semiconductor chipand the substrate against the other to thereby bond the semiconductorchip to the substrate.

[0026] According to this constitution, the resin is made to run insidethe region in which the semiconductor chip is to be mounted on thesubstrate, and the amount of the resin that may run outside the regioncan be reduced. Accordingly, this constitution is free from the troubleof bubbles that may be formed by the resin running outside the region toengulf the edge of the semiconductor chip. In addition, since thecontact area between the semiconductor chip and the resin is small, fewbubbles are formed between the two. Even when some bubbles are formed,they may be removed through the through-hole of the substrate.Accordingly, semiconductor devices of high reliability can bemanufactured.

[0027] Embodiments of the invention are mentioned below.

[0028] (1) In the method of manufacturing a semiconductor device havingthe first characteristic constitution as above, the resin is put on thesubstrate in the first step to form a recessed or holed space thereonthat opens into the through-hole.

[0029] According to this constitution, the resin forms a recess or ahole that opens into the through-hole, and it is made to run inside theregion in which the semiconductor chip is to be mounted on thesubstrate. The resin flow toward the recess or the hole can be promotedby removing air through the through-hole that opens into the recess orthe hole.

[0030] (2) In the method of manufacturing a semiconductor device havingthe first characteristic constitution as above, the electrodes areformed along the two opposite sides of the semiconductor chip, and

[0031] in the first step, the resin is put along the two sides.

[0032] In this constitution, the resin is put along the two oppositesides of the semiconductor chip along which the electrodes are formed.Accordingly, a smaller amount of the resin is easy to put in theintended region.

[0033] (3) In the method of manufacturing a semiconductor device havingthe first characteristic constitution as above, the electrodes areformed in the peripheral area of the semiconductor chip, and

[0034] in the first step, the resin is put in the site corresponding tothe region that is inside the region of the semiconductor chip in whichthe electrodes are formed.

[0035] In this constitution, the range of the resin to run outside canbe reduced. Accordingly, for example, the resin can be kept within therange of the region in which the semiconductor chip is to be mounted onthe substrate. Therefore, since the resin does not engulf the edge ofthe semiconductor chip, this constitution is more effective forpreventing the formation of bubbles around the edge of the semiconductorchip.

[0036] (4) In the method of manufacturing a semiconductor device havingthe first characteristic constitution as above, the resin is put withina range so as not to overstep the region in which the semiconductor chipis to be mounted on the substrate in the second step.

[0037] In this constitution, the resin is put within a range notoverstepping the region in which the semiconductor chip is to be mountedon the substrate. Specifically, since the resin does not engulf the edgeof the semiconductor chip, this constitution is more effective forpreventing the formation of bubbles around the edge of the semiconductorchip.

[0038] (5) In the method of manufacturing a semiconductor device havingthe first characteristic constitution as above, the resin containsconductive particles, and

[0039] in the second step, the conductive particles are made to bebetween the electrodes and the wiring pattern. In this case, the resinmay be an anisotropic conductive film.

[0040] According to this constitution, the electrodes can beelectrically connected with the wiring pattern.

[0041] (6) The semiconductor device manufactured according to any of theabove-mentioned, semiconductor device-manufacturing methods.

[0042] (7) A semiconductor device comprising;

[0043] a semiconductor chip having a plurality of electrodes,

[0044] a substrate having a wiring pattern formed thereon, with thesemiconductor chip being face-down bonded thereto, and having at leastone through-hole in the region in which the semiconductor chip ismounted on the substrate, and

[0045] a resin put at least between the semiconductor chip and thesubstrate, wherein

[0046] the resin is put therebetween to form a space that opens into thethrough-hole.

[0047] In this constitution, the resin is made to run in the space thatopens into the through-hole of the substrate, and the amount of theresin that may run outside the region in which the semiconductor chip ismounted on the substrate can be reduced. Accordingly, this constitutionis free from the trouble of bubbles that may be formed by the resinrunning outside the region to engulf the edge of the semiconductor chip.In addition, since the contact area between the semiconductor chip andthe resin is small, few bubbles are formed between the two. Even whensome bubbles are formed, they may be removed through the through-hole ofthe substrate. Moreover, in the subsequent packaging step, moisture maybe removed from the semiconductor device through the space surrounded bythe resin to open into the through-hole of the substrate. Accordingly,semiconductor devices of high reliability can be provided.

[0048] (8) In the semiconductor device of above (7), the space is largerthan the through-hole.

[0049] The advantage of this constitution is that, in the subsequentpackaging step, moisture can be removed more readily from thesemiconductor device. Specifically, since the space surrounded by theresin is larger than the through-hole of the substrate, moisture can beremoved more surely, for example, from the resin.

[0050] (9) In the semiconductor device of above (7), the resin is put soas not to overstep the range of the region in which the semiconductorchip is mounted on the substrate.

[0051] In this constitution, the resin is put, not overstepping therange of the region in which the semiconductor chip is mounted on thesubstrate. Specifically, since the resin does not engulf the edge of thesemiconductor chip, this constitution is more effective for preventingthe formation of bubbles around the edge of the semiconductor chip.

[0052] (10) In the semiconductor device of above (7), the resin containsconductive particles, and

[0053] the conductive particles are put between the electrodes and thewiring pattern.

[0054] In this case, the resin may be an anisotropic conductive film.

[0055] In this constitution, the electrodes can be electricallyconnected with the wiring pattern.

[0056] (11) A circuit board having thereon the semiconductor device ofany of above (7) to (10).

[0057] (12) An electronic instrument having therein the semiconductordevice of any of above (7) to (10).

[0058] Some preferred embodiments of the invention are describedhereinunder with reference to the drawings attached hereto, which,however, are not intended to restrict the scope of the invention.

First Embodiment

[0059]FIG. 1(A) through FIG. 2 are views illustrating the semiconductordevice of this embodiment and a method of manufacturing it. Precisely,FIG. 1(A) is a view illustrating a method of manufacturing thesemiconductor device of this embodiment; and FIG. 1(B) is a view showingthe semiconductor device manufactured according to the method. FIG. 2 isa plan view of the semiconductor device of FIG. 1(B). The semiconductordevice of this embodiment comprises a semiconductor chip 10, a substrate20, and a resin. The constitution of the semiconductor device of thisembodiment is described below.

[0060] As in FIG. 1(B), the semiconductor chip 10 has a plurality ofelectrodes (or pads) 12 made of, for example, aluminum. The plurality ofelectrodes 12 may be aligned in the peripheral area of the semiconductorchip 10, or in the center area of the semiconductor chip 10. When thesemiconductor chip 10 has a rectangular face, the electrodes 12 may bealigned along the parallel two sides of the rectangular semiconductorchip 10, or may be aligned along the four sides thereof. An insulatingfilm (now shown) is formed on the semiconductor chip 10, not covering atleast a part of the surface of each electrode 12. The insulating filmmay be made of, for example, SiO₂, SiN, polyimide resin. Optionally,bumps (not shown) of solder balls, gold wire balls, gold plates or thelike may be formed on the electrodes 12. In this case, a bump metaldiffusion preventive layer of nickel, chromium, titanium or the like maybe disposed between the electrode 12 and the bump.

[0061] As in FIG. 1(B), the substrate 20 may be made of any material oforganic or inorganic substances, or may have an organic/inorganiccomposite structure. One example of the substrate 20 made of an organicmaterial is a flexible substrate of polyimide resin. Ceramic substratesand glass substrates are examples of the substrate 20 made of aninorganic material. Glass-epoxy substrates are examples of the substrate20 having an organic/inorganic composite structure. For the substrate20, also employable are multi-layered substrates and built-upsubstrates.

[0062] The wiring pattern 22 is formed on one or both surfaces of thesubstrate 20. In many cases, the wiring pattern 22 has a multi-layeredstructure. For example, any of copper (Cu), chromium (Cr), titanium(Ti), nickel (Ni) and titanium-tungsten (Ti—W) may be layered to formthe wiring pattern 22. The wiring pattern 22 may be formed throughphotolithography, sputtering or plating. A part of the wiring patternmay form a land (not shown) of which the area is larger than the wiringarea. The land has the function of ensuring electric connection in thedevice, and is often formed to act as an electric contact with theelectrodes 12 of the semiconductor chip 10 or with external terminals40.

[0063] As in FIG. 1(B) and FIG. 2, the substrate 20 is worked to have atleast one through-hole (that is, one or more through-holes) 24 in theregion in which the semiconductor chip 10 is mounted thereon. Thethrough-hole 24 is open through the both surfaces of the substrates 20.The through-hole 24 may be formed nearly in the center of the region inwhich the semiconductor chip 10 is mounted on the substrate 20. Theshape and the size of the through-hole 24 are not specifically defined,and may be such that air can be removed through it. The through-hole 24can be formed, for example, by punching or etching the substrate.

[0064] The substrate 20 may be worked to have via-holes 26 for externalconnection, in addition to the through-hole 24. Via the via-holes 26,the both surfaces of the substrate 20 can be electrically connected witheach other. In case where the substrate 20 has the via-holes 26 formedtherethrough, a part of the wiring pattern 22 shall run over thevia-holes 26. The part of the wiring pattern 22 to run thereover may bea land (not shown). Irrespective of the profile of the wiring pattern 22formed on the substrate 20, the via-holes 26, if any, ensure electricconnection with the wiring pattern 22 on the both sides of the substrate20.

[0065] As in FIG. 1(B), the semiconductor chip 10 is face-down bonded tothe substrate 20. In this case, the mode of electric connection betweenthe electrodes 12 and the wiring pattern 22 includes bonding of the twowith conductive resin paste, or metallic bonding with Au—Au, Au—Sn,solder or the like, or bonding through contraction of insulating resin,any of which is employable herein. For example, as in FIG. 1(B), thesemiconductor chip 10 may be face-down bonded to the substrate 20 withan anisotropic conductive material 30 containing conductive particles.As the case may be, the two may be face-down bonded to each other withbumps (not shown) disposed on the electrodes 12 of the semiconductorchip 10. The bumps may be formed according to a ball-bumping method inwhich is used a bonding wire, or an electroplating method, anelectroless plating method, a paste printing method, a ball-mountingmethod, or a combination of such methods. The semiconductor device ofthis embodiment may have a stacked structure of such that a plurality ofsemiconductor chips 10 are layered on the substrate 20.

[0066] As in FIG. 1(B), a resin is put between the semiconductor chip 10and the substrate 20. The resin may contain conductive particles, likethe anisotropic conductive material 30. Precisely, the anisotropicconductive material 30 contains conductive particles (conductive filler)dispersed in an adhesive (binder). The conductive particles in theanisotropic conductive material 30 are put between the electrodes 12 andthe wiring pattern 22. Accordingly, the two are electrically connectedwith each other. Apart from this, the resin may be an under-filler. Theunder-filler may have the function of relaxing the stress in thesemiconductor device. This may protect the electric connection betweenthe electrodes 12 and the wiring pattern 22.

[0067] As in FIG. 1(B) and FIG. 2, the anisotropic conductive material30 is put to form a space that opens into the through-hole 24. In thisembodiment, the anisotropic conductive material 30 is disposed to coverthe periphery of the region in which the semiconductor chip 10 ismounted, thereby forming a frame structure of which the outer peripheryis nearly analogous to the periphery of the semiconductor chip 10, as inFIG. 2 showing the plan view of the substrate 20. In other words, a hole32 surrounded by the anisotropic conductive material 30 is formedbetween the semiconductor chip 10 and the substrate 20, and this opensinto the through-hole 24. The size of the space that opens into thethrough-hole 24 is not specifically defined. For example, in case wherethe hole 32 is larger than the through-hole 24, moisture (for example,the moisture in the anisotropic conductive material 30) can be moresurely removed from the semiconductor device when the semiconductordevice is treated at high temperatures.

[0068] A plurality of external terminals 40 may be disposed to be incontact with the wiring pattern 22. For example, external terminals 40may be disposed to be in contact with the wiring pattern 22 via thevia-holes 26 formed through the substrate 20, as in FIG. 1(B).Precisely, the external terminals 40 are connected with a part of thewiring pattern 22 (for example, with the land thereof) exposed outsidevia the via-holes 26, and these external terminals 40 protrude from thesurface of the substrate 20 opposite to the surface thereof that facesthe semiconductor chip 10. The external terminals 40 may be made ofsolder. For example, solder to be solder balls is filled into eachvia-hole 26 to form a solder ball-integrated conductive member fitted ineach via-hole 26. Not using solder, the external terminals 40 may bemade of any other metal or conductive resin. Regarding the embodiment offorming the external terminals 40, employable is any mode of FAN-IN,FAN-OUT or FAN-IN/OUT, for example, as in FIG. 1(B).

[0069] Not intentionally forming the external terminals 40 in the manneras above, solder cream applied to the mother board for mounting thedevice thereon may be used for forming external terminals. In this case,the solder cream can finally form external terminals owing to thesurface tension of its melt. The semiconductor device of the type is aland-grid-array device having a land for forming external terminals. Ifdesired, a land may be formed on the surface of the substrate 20opposite to the surface thereof having the wiring pattern 22 thereon andfacing the semiconductor chip 10, and the land may be electricallyconnected with the wiring pattern 22 via the via-holes 26. Also ifdesired, the through-hole 26 may be filled with an conductive material,and its surface may serve as a land.

[0070] The substrate 20 may be partly extended for external connectionat the extended part thereof. A part of the substrate 20 may be a leadfor a connector, or a connector may be mounted on the substrate 20, orthe wiring pattern 22 formed on the substrate 20 may be directlyconnected with other electronic instruments.

[0071] The method of manufacturing the semiconductor device of thisembodiment is described below.

First Step

[0072] As in FIG. 1(A), an anisotropic conductive material 30 is putbetween the semiconductor chip 10 and the substrate 20. The anisotropicconductive material 30 may be put on at least any of the semiconductorchip 10 or the substrate 20. The anisotropic conductive material 30 isdisposed on any of the two in such a manner that it forms a space thatopens into the through-hole 24 when the semiconductor chip 10 iscombined with the substrate 20. The anisotropic conductive material 30may be either an anisotropic conductive film previously formed to be asheet, or a liquid-type, anisotropic conductive paste.

[0073] In this embodiment, the anisotropic conductive material 30 isdisposed to cover the periphery of the region in which the semiconductorchip 10 is to be mounted, thereby forming a frame structure of which theouter periphery is nearly analogous to the periphery of thesemiconductor chip 10, as in the plan view of the substrate 20. In thiscase, the anisotropic conductive material 30 may overstep in some degreethe region of the substrate 20 in which the semiconductor chip 10 is tobe mounted on the substrate 20. Accordingly, the anisotropic conductivematerial 30 can be easily and surely disposed in the intended area.

[0074] The anisotropic conductive material 30 forms a space that opensinto the through-hole 24. Precisely, it forms a hole 32 surrounded bythe anisotropic conductive material 30. The size of the opening of thehole 32 is not specifically defined, and it may be determined dependingon the profile of the hole 32 to be formed by the anisotropic conductivematerial 30 that runs toward the hole 32 in the subsequent step.

[0075] For example, after the anisotropic conductive material 30 (forexample, anisotropic conductive paste) has been spread entirely in theregion of the substrate 20 in which the semiconductor chip 10 is to bemounted on the substrate 20, a part of it existing in the center andtherearound to be the site where the through-hole 24 is to be formed maybe removed to form the hole 32. In that manner, for example, when thesubstrate 20 has a plurality of regions for a plurality of semiconductorchips 10 to be mounted thereon in the form of a matrix (not shown), theanisotropic conductive material 30 can be easily formed on the substrate20 of that type and can readily have the hole 32 in every region foreach semiconductor chip 10.

Second Step

[0076] Either one of the semiconductor chip 10 or the substrate 20 ispressed against the other, whereby the electrodes 12 are electricallyconnected with the wiring pattern 22 via the conductive particles in theanisotropic conductive material 30. In this step, the semiconductor chip10 may be heated. In case where the anisotropic conductive material 30comprises a thermosetting resin, it is once melted when heated, and thencured. In case where the anisotropic conductive material 30 is ananisotropic conductive film, it is once fluidized when heated. In casewhere resins differing from the anisotropic conductive material 30 areused, energy may be imparted to them in accordance with the curingmechanism of the resins used.

[0077] After thus fluidized, the anisotropic conductive material 30 iscompressed between the semiconductor chip 10 and the substrate 20, andruns between them. Specifically, the thus-fluidized anisotropicconductive material 30 runs in all directions inside and outside theregion in which the semiconductor chip 10 is mounted on the substrate20, as in the plan view of the substrate 20. In this embodiment, thehole 32 that opens into the through-hole 24 is formed inside the regionin which the semiconductor chip 10 is mounted on the substrate.Therefore, in this step, the anisotropic conductive material 30 can runnot only inside the chip-mounted region but also outside it.Specifically, the amount of the anisotropic conductive material 30running outside the chip-mounted region can be reduced, and theanisotropic conductive material 30 running outside the semiconductorchip 10 does not engulf the edge of the chip 10. Accordingly, fewbubbles are formed around the edge of the semiconductor chip 10. Inaddition, since the contact area between the semiconductor chip 10 andthe anisotropic conductive material 30 is small, few bubbles are formedtherein. Even if some bubbles are formed, they can be removed throughthe through-hole 24 of the substrate 20. Accordingly, semiconductordevices of high reliability can be manufactured.

[0078] After further heated, the fluidized anisotropic conductivematerial 30 is cured, and the hole 32 surrounded by the thus-curedmaterial 30 is smaller than the original space surrounded by thenon-cured material 30, as in FIG. 1(B). The size of the cross section ofthe hole 32 is not specifically defined.

[0079] Though not illustrated herein, the amount of the originalanisotropic conductive material 30 and the original form of the hole 32surrounded by the material 30 can be so controlled that thesemiconductor device finally produced does not have the hole 32. In theembodiment not illustrated, the hole 32 having been formed in the firststep of the manufacture process as in FIG. 1(A) is filled up with theanisotropic conductive material 30 having run inside the chip-mountedregion in the subsequent step. Even in this case, few bubbles are formedaround the edge of the semiconductor chip 10 for the same reasons asabove, and some bubbles, even if formed, can be removed through thethrough-hole 24.

Subsequent Steps

[0080] After the semiconductor chip 10 has been face-down bonded to thesubstrate via the anisotropic conductive material 30 or the like,external terminals 40 may be connected with the wiring pattern 22. Forthis, the external terminals 40 are formed under heat (this is a reflowstep). Also in this step, the semiconductor device of this embodiment iseffective. For example, in the semiconductor device of FIG. 1(B),moisture may be removed by heating it in the reflow step. Precisely,moisture in the anisotropic conductive material 30 that forms the hole32 in the region in which the semiconductor chip 10 is mounted can beremoved through the through-hole 24. In case where the space of the hole32 is larger than the size of the through-hole 24, moisture can be moreeffectively removed from the device through the through-hole 24.

[0081] In this embodiment, the resin runs inside the region in which thesemiconductor chip 10 is mounted, and the amount of the resin that mayrun outside it is reduced. Accordingly, the resin running outside thechip-mounted region does not engulf the edge of the semiconductor chip10 to form bubbles around the edge thereof. Therefore, semiconductordevices of high reliability can be manufactured.

[0082]FIG. 3(A) and FIG. 3(B) are to illustrate a modification of thesemiconductor device of this embodiment. In the semiconductor device ofthis modification, the behavior of the resin (anisotropic conductivematerial 50) differs from that in the above-mentioned embodiment. Theconstitution of the semiconductor device of this modification and themethod of manufacturing it may be substantially the same as those of theabove-mentioned embodiment, except for the matters specificallydescribed hereinunder.

[0083] As in FIG. 3(A), the method of manufacturing the semiconductordevice of this modification comprises forming a recess 52 in theanisotropic conductive material 50 having the same constitution asabove. In this, the recess 52 opens into the through-hole 24.Concretely, the anisotropic conductive material 50 is formed to coverthe entire surface of the semiconductor chip 10, but it does not coverthe through-hole 24 and therearound of the substrate 20. Specifically,the anisotropic conductive material 50 is so disposed that it isrecessed at and around the through-hole 24. In this constitution, theanisotropic conductive material 50 can more easily run inside the regionin which the semiconductor chip 10 is mounted on the substrate 20.

[0084] The anisotropic conductive material 50 thus having run inside theregion in which the semiconductor chip 10 is mounted is cured by heatingit in the subsequent step, whereby a space smaller than the originalrecess 52 may be formed, as in FIG. 3(B). Like in the above-mentionedembodiment, the recess 52 shown in FIG. 3(B) may be filled up, and theanisotropic conductive material 50 may not have the recess 52. Thesemiconductor device of this modification may be manufactured accordingto the method mentioned above.

Second Embodiment

[0085]FIG. 4(A) and FIG. 4(B) are to illustrate a semiconductor deviceof this embodiment and a method of manufacturing it. Precisely, FIG.4(A) is a view illustrating the method for manufacturing thesemiconductor device of this embodiment; and FIG. 4(B) is a view showingthe semiconductor device manufactured according to the method. In thesemiconductor device of this embodiment, the behavior of the resin 60differs from that in the above-mentioned embodiments. The resin 60 maybe an under-filler. The under-filler may have the function of relaxingthe stress in the semiconductor device. This may protect the electricconnection between the electrodes 12 and the wiring pattern 22. Thesemiconductor device of this embodiment and the method of manufacturingit may be substantially the same as those of the above-mentionedembodiments, except for the matters specifically described hereinunder.

[0086] First described is the method of manufacturing the semiconductordevice of this embodiment.

[0087] In this embodiment, the resin 60 is so disposed that it does notprotrude outside the semiconductor chip 10 in the plan view of thesubstrate 20 when the semiconductor chip 10 is combined with thesubstrate 20.

[0088] For example, the first embodiment will be applied to thisembodiment. In this, the resin 60 may be put in the site correspondingto the region that is inside the region of the semiconductor chip 10 inwhich the electrodes 12 are formed, in the plan view of the substrate20, thereby forming a frame structure of which the outer periphery isnearly analogous to the periphery of the semiconductor chip 10. Thisconstitution may have a hole 62 that opens into the through-hole 24.

[0089] Similarly, on the other hand, the modification of the firstembodiment will be applied to this embodiment. In this, the resin 60 maybe put in the site corresponding to the region that is inside the regionof the semiconductor chip 10 in which the electrodes 12 are formed,thereby forming a recess (not shown) that opens into the through-hole24. The method for forming the hole 62 or the recess (not shown) and theeffect of the hole 62 or the recess (not shown) are the same as those inthe above-mentioned embodiments.

[0090] The resin 60 thus formed runs in all directions inside andoutside the region in which the semiconductor chip 10 is mounted on thesubstrate, after the semiconductor chip 10 has been pressed against thesubstrate 20 and the two are heated. In this embodiment, the resin 60 isdisposed in the site corresponding to the region that is inside theregion of the semiconductor chip 10 in which the electrodes 12 areformed. In this, therefore, the range of the resin 60 that may runoutside can be reduced. Accordingly, for example, the fluidized resin 60is prevented from protruding outside the semiconductor chip 10 in theplan view of the substrate 20, as in FIG. 4(B). Specifically, the rangeof the resin 60 that runs outside is limited to the range of the regionin which the semiconductor chip 10 is mounted. Accordingly, in this, theresin 60 is more surely prevented from reaching the edge of thesemiconductor chip 10. Therefore, this constitution is more effectivefor preventing the formation of bubbles around the edge of thesemiconductor chip 10.

[0091] The semiconductor device of this embodiment is manufacturedaccording to the method mentioned above. As in FIG. 4(B), the resin 60may be provided so as not to protrude outside the semiconductor chip 10in its plan view. The mode of electric connection between the electrodes12 and the wiring pattern 22 in this embodiment may be metallic bondingor the like, as in the above-mentioned embodiments.

Third Embodiment

[0092]FIG. 5 is a view illustrating a semiconductor device of thisembodiment. In the semiconductor device of this embodiment, theconstitution of the resin (anisotropic conductive material 70) differsfrom that in the above-mentioned embodiments. The semiconductor deviceof this embodiment and the method of manufacturing it may besubstantially the same as those of the above-mentioned embodiments,except for the matters specifically described hereinunder.

[0093] As in FIG. 5, the semiconductor of this embodiment is effectivefor the case in which the electrodes 12 are aligned along the twoparallel sides of the semiconductor chip 10 mounted on the substrate.Specifically, in this, the anisotropic conductive material 70 acts toensure the electric connection between the electrodes 12 and the wiringpattern 22, and it is disposed along the two sides of the semiconductorchip 10 along with the electrodes 12 are aligned.

[0094] As in FIG. 5, the anisotropic conductive material 70 in thesemiconductor device of this embodiment may be so disposed that itprotrudes in some degree outside the region in which the semiconductorchip 10 is mounted on the substrate, like in the first embodiment.Though not shown, for example, the anisotropic conductive material 70may be disposed so as not to overstep the region in which thesemiconductor chip 10 is mounted on the substrate 20, in the plan viewof the substrate 20, like in the second embodiment. The method ofmanufacturing the semiconductor device of this embodiment may besubstantially the same as that described hereinabove.

[0095] In addition to the advantages of the other embodiments mentionedabove, the semiconductor device of this embodiment has another advantagein that a smaller amount of resin may be disposed more easily therein.

[0096]FIG. 6 shows a circuit board 100 on which the semiconductor device1 of any of the above-mentioned embodiments is mounted. For the circuitboard 100, for example, an organic substrate such as a glass-epoxysubstrate or the like is generally employed. On the circuit board 100,formed is a wiring pattern of copper or the like to give a desiredcircuit. The wiring pattern is mechanically connected with the externalterminals of the semiconductor device to ensure electric connectiontherebetween.

[0097] One example of electronic instruments equipped with thesemiconductor device of the invention is a notebook-sized personalcomputer 200, as in FIG. 7; and another example thereof is a portabletelephone 300, as in FIG. 8.

What is claimed is:
 1. A method of manufacturing a semiconductor device,comprising; a first step of putting a resin between one surface of asemiconductor chip having a plurality of electrodes formed thereon and asubstrate having a wiring pattern formed thereon and having at least onethrough-hole in a region in which the semiconductor chip is to bemounted on the substrate, to form a space therebetween that opens intothe through-hole, and a second step of pressing either one of thesemiconductor chip and the substrate against the other to thereby bondthe semiconductor chip to the substrate.
 2. The method of manufacturinga semiconductor device as claimed in claim 1 , wherein the resin is puton the substrate in the first step to form a recessed or holed spacethereon that opens into the through-hole.
 3. The method of manufacturinga semiconductor device as claimed in claim 1 , wherein the electrodesare formed along the two opposite sides of the semiconductor chip, andin the first step, the resin is put along the two sides.
 4. The methodof manufacturing a semiconductor device as claimed in claim 1 , whereinthe electrodes are formed in the peripheral area of the semiconductorchip, and in the first step, the resin is put in the site correspondingto the region that is inside the region of the semiconductor chip inwhich the electrodes are formed.
 5. The method of manufacturing asemiconductor device as claimed in claim 1 , wherein the resin is putwithin a range not overstepping the region in which the semiconductorchip is to be mounted on the substrate in the second step.
 6. The methodof manufacturing a semiconductor device as claimed in claim 1 , whereinthe resin contains conductive particles, and in the second step, theconductive particles are made to be between the electrodes and thewiring pattern.
 7. The method of manufacturing a semiconductor device asclaimed in claim 6 , wherein the resin is an anisotropic conductivefilm.
 8. A semiconductor device manufactured according to thesemiconductor device-manufacturing method of any of claims 1 to 7 .
 9. Asemiconductor device comprising; a semiconductor chip having a pluralityof electrodes, a substrate having a wiring pattern formed thereon, withthe semiconductor chip being face-down bonded thereto, and having atleast one through-hole in a region in which the semiconductor chip ismounted on the substrate, and a resin put at least between thesemiconductor chip and the substrate, wherein the resin is puttherebetween to form a space that opens into the through-hole.
 10. Thesemiconductor device as claimed in claim 9 , wherein the space is largerthan the through-hole.
 11. The semiconductor device as claimed in claim9 , wherein the resin is put so as not to overstep the range of theregion in which the semiconductor chip is mounted on the substrate. 12.The semiconductor device as claimed in claim 9 , wherein the resincontains conductive particles, and the conductive particles are putbetween the electrodes and the wiring pattern.
 13. The semiconductordevice as claimed in claim 12 , wherein the resin is an anisotropicconductive film.
 14. A circuit board having thereon the semiconductordevice of any of claims 9 to 13 .
 15. An electronic instrument havingtherein the semiconductor device of any of claims 9 to 13 .